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| IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load TJ = 125C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive TC = 25C Maximum Ratings 1200 1200 20 30 30 15 60 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W C C C C C g g TO-247 AD (IXSH) (TAB) G C E TO-268 ( IXST) G E (TAB) Features * High Blocking Voltage * Epitaxial Silicon drift region - fast switching - small tail current - low switching losses * MOS gate turn-on for drive simplicity * Molding epoxies meet UL 94 V-0 flammability classification Applications Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 260 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) Weight TO-247 TO-268 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 3 TJ = 125C 6 50 2.5 100 TJ = 125C 3.0 2.8 3.4 V V mA mA nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1.0 mA, VGE = 0 V = 250 mA, VCE = VGE AC motor speed control DC servo and robot drives Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies * DC choppers * * * * VCE = 0.8 * VCES Note 1 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Note 2 IXYS reserves the right to change limits, test conditions, and dimensions. 98708A (7/00) (c) 2000 IXYS All rights reserved 1-2 IXSH 15N120BD1 IXST 15N120BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7 9.5 1400 VCE = 25 V, VGE = 0 V, f = 1 MHz 120 37 57 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 14 25 Inductive load, TJ = 25C IC = IC90, VGE = 15 V RG = 10 W VCE = 0.8 VCES Note 3 Inductive load, TJ = 125C IC = IC90, VGE = 15 V RG = 10 W, VCE = 0.8 VCES Note 3 30 25 148 126 1.5 30 25 2.6 265 298 3.1 300 250 2.9 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W (TO-247) 0.25 K/W TO-268AA (D3 PAK) Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXSH) Outline gfs Cies Coes Cres Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Note 2 1.5 2.49 Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = IC90, VGE = 0 V Note 2 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150OC TJ = 25OC 5.5 30 1.7 2.5 V V A ns 0.9 K/W Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IF = 30A; VGE = 0 V; TJ = 100C VR = 100 V; -diF/dt = 100 A/ms IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 ms, duty cycle 2 % 3. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ orincreased RG. Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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